論文

公開件数: 93 件
No. 掲載種別 単著・共著区分 タイトル 著者 誌名 出版者 巻号頁 出版日 ISSN DOI URL 概要
1

Origins of the nitrogen-related deep donor center and its preceding species in nitrogen-doped silicon determined by deep-level transient spectroscopy
Nakamura Minoru, Murakami Susumu, Udono Haruhiko
Applied Physics Express
Japan Society of Applied Physics
12/ 2, 21005-21005
2019/02/01
1882-0778

URL

2 (MISC)総説・解説(学術雑誌)
単著
赤外センサ用Mg2Si結晶の融液成長
鵜殿 治彦
日本結晶成長学会誌
日本結晶成長学会
45/ 3
2018/10
0385-6275

URL
<p>&nbsp;&nbsp;We have grown high purity n-type Mg2Si single crystals by the vertical Bridgman growth method using a pyrolitic graphite (PG) crucible and high purity Mg (5N or 6N-up) and Si (10N-grade) source metals. The saturated electron concentration and Hall mobility of the grown crystals were (1 - 2) × 1015 cm-3 and 480 - 485 cm2/Vs at room temperature. Mg2Si substrates prepared from the crystals had an enough crystalline quality to fabricate pn-junction photodiodes (PDs). The ring-electrode-type, pn-junction PD fabricated by the rapid thermal diffusion of Ag and conventional lift-off process showed a good photoresponse below 2 μm in wavelength. The detectivity D* of 1 × 1012 cmHz1/2/W has been achieved with the PDs under 1.31 μm laser diode (LD) bombardment at 77K.</p>
3 (MISC)総説・解説(学術雑誌)

Si中Cu,Niの熱的振る舞い:フォトルミネッセンス/DLTS測定
中村 稔, 村上 進, 鵜殿 治彦
表面科学
公益社団法人 日本表面科学会
37/ 3, 128-133
2016/03
0388-5321

URL
The influence of diffusion temperature on the formation of one type of Cu center denoted as CuDLB center, the relationship between the concentrations of the CuDLB center after the diffusion of Cu and those of contaminated Cu on sample surfaces, and the transformation of the CuDLB center to another type of Cu center denoted as the CuDLA center by annealing were investigated by photoluminescence and deep-level transient spectroscopy (DLTS) measurements. It was found that the CuDLB center is composed of one core Cu atom and weakly bonded three interstitial Cu atoms around the core and that the CuDLA center is the core of the CuDLB center. For Ni, the depth profiles of the substitutional Ni (Ni center) in silicon diffused with various concentrations of the element were measured by DLTS, and were found to be controlled by the temperature-dependent outdiffusion of Ni.
4 研究論文(学術雑誌)
共著
Transformation of the nickel donor center by annealing in silicon measured by deep-level transient spectroscopy
Minoru Nakamura, Susumu Murakami, and Haruhiko Udono
Jpn. J. Appl. Phys.

55, 11302
2015/12/10

10.7567/JJAP.55.011302


5 研究論文(学術雑誌)
共著
Thermal expansion of semiconducting silicides b-FeSi2 and Mg2Si
Motoharu Imai, Yukihiro Isoda, Haruhiko Udono
Intermetallics

67, 75-80
2015/08/24

10.1016/j.intermet.2015.07.015


6 研究論文(国際会議プロシーディングス)
共著
Fabrication and characterization of Mg2Si pn-junction photodiode with a ring electrode
K. Daitoku, M. Takezaki, S. Tanigawa, D. Tsuya, H. Udono
JJAP Conf. Proc.

3, 11103
2015/06/08




7 研究論文(国際会議プロシーディングス)
共著
Characterization of band structure of K8Ga8Si38 clathrate by optical measurement
Masaru Iioka, Haruhiko Udono, Motoharu Imai, and Masato Aoki
JJAP Conf. Proc.

3, 011201
2015/06/08




8 研究論文(学術雑誌)
共著
Crystal growth and characterization of Mg2Si for IR-detectors and thermoelectric applications
Haruhiko Udono, Hiroyuki Tajima, Masahito Uchikoshi and Masaru Itakura
Jpn. J. Appl. Phys.

54, 07JB06
2015/06/08

10.7567/JJAP.54.07JB06


9 研究論文(学術雑誌)
共著
Tailoring thermoelectric properties of nanostructured crystal silicon fabricated by infrared femtosecond laser direct writing
M. Mori, Y. Shimotsuma, T. Sei, M. Sakakura, K. Miura, and H. Udono
Phys. Status Solidi A

212/ 4, 715-721
2015/01/15

10.1002/pssa.201431777


10 研究論文(学術雑誌)
共著
Depth profiles of the nickel donor center in p-type silicon diffused with dilute nickel measured by deep-level transient spectroscopy
M.Nakamura, S. Murakami, and H. UDONO
Jpn. J. Appl. Phys.

53, 091301
2014/08/06

10.7567/JJAP.53.091301


11 研究論文(学術雑誌)
共著
Surface aspects of discolouration in Bisphenol A Polycarbonate (BPA-PC), used as lens in LED-based products
M. Yazdan Mehr, W.D. van Driel, H. Udono, G.Q. Zhang
Optical Materials

37, 155-159
2014/06/13

10.1016/j.optmat.2014.05.015


12 研究論文(学術雑誌)
共著
Convenient Melt-Growth Method for Thermoelectric Mg2Si
K. KAMBE and H. UDONO
Journal of Electronic Materials

43, 2212-2217
2014/01/29

10.1007/s11664-014-3014-8


13 研究論文(学術雑誌)
共著
Solid evidence for magnetic moment enhancement in micro-particles of Mn11Si19
K. Hammura, H. Udono, T. Aono
Physica Status Solidi C

10/ 12, 1735-1738
2013/11/25

10.1002/pssc.201300382


14 研究論文(学術雑誌)
共著
Spectral characterization of Mg2Si pn-junction diode depended on RTA periods
M. Takezaki, Y. Yamanaka, M. Uchikoshi, H. Udono
Physica Status Solidi C

10/ 12, 1812-1814
2013/11/13

10.1002/pssc.201300356


15 研究論文(学術雑誌)
共著
Solution growth and optical characterization of Mn11Si19
M. Iioka, D. Ishida, S. Kojima and H. Udono
Physica Status Solidi C

10/ 12, 1808-1811
2013/11/13

10.1002/pssc.201300354


16 研究論文(学術雑誌)
共著
Solid-phase growth of Mg2Si by annealing in inert gas atmosphere
T. Ikehata, T. Ando, T. Yamamoto, Y. Takagi, N. Sato, and H. Udono
Physica Status Solidi C

10/ 12, 1708-1711
2013/11/13

10.1002/pssc.201300358


17 研究論文(学術雑誌)
共著
Preparation and thermoelectric properties of Mg2Si0.9-xSnxGe0.1
S. Tada, Y. Isoda, H. Udono, H. Fujiu, S. Kumagai and Y. Shinohara
Physica Status Solidi C

10/ 12, 1704-1707
2013/11/13

10.1002/pssc.201300357


18 研究論文(学術雑誌)
共著
Thermoelectric properties of p-type Mg2Si0.25Sn0.75 doped with sodium acetate and metallic sodium
S. Tada, Y. Isoda, H. Udono, H. Fujiu, S. Kumagai and Y. Shinohara
J. Electron. Mat.

43, 1580-1584
2013/10/17

DOI 10.1007/s11664-013-2797-3


19 研究論文(学術雑誌)
共著
Energy level(s) of the dissociation product of the 1.014eV photoluminescence copper center in n-type silicon determined by photoluminescence and deep-level transient spectroscopyspectroscopy
Minoru Nakamura, Susumu Murakami, and Haruhiko Udono
Journal of Applied Physics

114, 033508
2013/07/16

10.1063/1.4813878


20 研究論文(研究会,シンポジウム資料等)

シリサイド半導体の結晶成長とデバイス応用
鵜殿 治彦
電子情報通信学会技術研究報告. ED, 電子デバイス
一般社団法人電子情報通信学会
113/ 39, 77-81
2013/05/09
0913-5685

URL
豊富な資源量の元素で構成されるシリサイド半導体は、材料を大量消費するエネルギー利用の分野において資源・環境リスクの面から優れたポテンシャルを秘めている。本稿では、我々が進めてきたβ-FeSi_2とMg_2Siの結晶成長技術と基本的な電気・光学特性、および熱電変換や熱光発電,赤外センサを目指したデバイス開発動向について紹介する。
21 研究論文(学術雑誌)
共著
Infrared photoresponse from pn-junction Mg2Si diodes fabricated by thermal diffusion
Haruhiko Udono, Yusuke Yamanaka, Masahito Uchikoshi, Minoru Isshiki
Journal of Physics and Chemistry of Solids

74, 311-314
2013/02




22 研究論文(学術雑誌)
共著
Thermoelectric properties of Na-doped Mg2Si0.25Sn0.75
S. Tada, Y. Isoda, H. Udono, H. Fujiu, S. Kumagai and Y. Shinohara
Trans. Mat. Res. Soc. Jpn.

38/ 1, 17-22
2013/01/07

DOI 10.1007/s11664-013-2797-3


23 研究論文(学術雑誌)
共著
Transformation reactions of copper centers in the space-charge region of a copper-diffused silicon crystal measured by deep-level transient spectroscopy
Minoru Nakamura, Susumu Murakami, and Haruhiko Udono
Journal of Applied Physics

112, 063530
2012/09/27




24 研究論文(学術雑誌)
共著
Copper centers in copper-diffused n-type silicon measured by photoluminescence and deep-level transient spectroscopy
Minoru Nakamura, Susumu Murakami, and Haruhiko Udono
Applied Physics Letters

101, 042113
2012/07/27




25 (MISC)総説・解説(学術雑誌)
単著
見直され始めたシリサイド系熱電材料
鵜殿治彦
日本熱電学会誌

8/ 3, 3-6
2012/03




26 研究論文(国際会議プロシーディングス)
共著
Growth condition dependence of direct bandgap in β-FeSi2 epitaxial films grown by molecular beam epitaxy
K. Noda, Y. Terai, N. Miura, H. Udono, Y. Fujiwara
Physica Procedia

23, 5-8
2012/02




27 研究論文(学術雑誌)
共著
Magnetisation of bulk Mn11Si19 and Mn4Si7
K. Hammura, H. Udono, I. J. Ohsugi , T. Aono , E. De Ranieri
Thin Solid Films

519, 8516-8519
2011/10




28 研究論文(学術雑誌)
共著
Band-gap Modifications of β-FeSi2 Epitaxial Films by Lattice Deformations
Y. Terai, K. Noda, K. Yoneda, H. Udono, Y. Maeda, and Y. Fujiwara
Thin Solid Films

519, 8468-8472
2011/10




29 研究論文(学術雑誌)
共著
Photoemission study on the valence band of a ß-FeSi2 thin film using synchrotron radiation
H Fujimoto, K. Ogawa, K. Takarabe, H. Udono, H. Sugiyama, J. Azuma, K. Takahashi and M. Kamada
Dalton Trans.

40, 6023-6027
2011/07




30 研究論文(学術雑誌)
共著
Solution Growth and Thermoelectric Properties of Single-Phase MnSi1.75−x
H. Udono, K. Nakamori, Y. Takahashi, Y. Ujiie, I. J. Ohsugi and T. Iida
J. Electron. Mat.

40, 1165-1170
2011/07




31 研究論文(学術雑誌)
共著
Semiconducting behavior of type-I Si clathrate K8Ga8Si38
M. Imai, A. Sato, H. Udono, Y. Imai, H. Tajima
Dalton Trans.

40, 4045-4047
2011/05




32 研究論文(国際会議プロシーディングス)
共著
Effect of temperature modulation during temperature gradient
solution growth of β-FeSi2
Y. Ujiie, K. Nakamori, S. Mashiko, H. Udono, T. Nagata
Physica Procedia

11, 177-180
2011/01




33 研究論文(学術雑誌)
共著
Spectroscopic characterization of β-FeSi2 single crystals and homoepitaxial β-FeSi2 films by XPS and XAS
F. Esaka, H. Yamamoto, H. Udono, N. Matsubayashi, K. Yamaguchi, S. Shamoto, M. Magara, T. Kimura
Appl. Surf. Sci.

257, 2950-2954
2011/01




34 研究論文(国際会議プロシーディングス)
共著
Surface structures of β-FeSi2 formed by heat-treatment in ultra-high vacuum and their influence on homoepitaxial growth
S. Matsumura, K. Ochiai, H. Udono, F. Esaka, K. Yamaguchi, H. Yamamoto, K. Houjo
Physica Procedia

11, 174-176
2011/01




35 研究論文(国際会議プロシーディングス)
共著
Preparation of schottky contacts on n-type Mg2Si single crystalline substrate
K.Sekino, M.Midonoya, H. Udono, Y. Yamada
Physica Procedia

11, 171-173
2011/01




36 研究論文(国際会議プロシーディングス)
共著
Surface characterization of homoepitaxial β-FeSi2 film on β-FeSi2 (111) substrate by X-ray photoelectron and absorption spectroscopy
F. Esaka, H. Yamamoto, H. Udono, N. Matsubayashi, K. Yamaguchi, S. Shamoto, M. Magara and T. Kimura
Physica Procedia

11, 150-153
2011/01




37 研究論文(国際会議プロシーディングス)
共著
Electrical Properties of Ca2Si Sintered Compact Synthesized by Spark Plasma Sintering
C. Wen, T. Nonomura, A. Kato, Y. Kenichi, H. Udono, K. Isobe, M. Otake, Y.Kubota, T. Nakamura, Y. Hayakawa, and H. Tatsuoka
Physica Procedia

11, 106-109
2011/01




38 研究論文(国際会議プロシーディングス)
共著
Surface analysis of single-crystalline β-FeSi2
Y. Yamada, W. Mao, H. Asaoka, H. Yamamoto, F. Esaka, H. Udono and T. Tsuru
Physica Procedia

11, 67-70
2011/01




39 (MISC)総説・解説(その他)
単著
資源・環境リスクに対応するシリサイド半導体の育成と物性評価
鵜殿治彦
第28回無機材料に関する最近の研究成果講演予稿集

5-8
2011/01




40 (MISC)総説・解説(国際会議プロシーディングズ)
共著
Fluorescence EXAFS study of residual Ga in β-FeSi2 grown from Ga solvent
H Yamada, M Tabuchi, Y Takeda, and H Udono
Journal of Physics: Conference Series

190, 012069
2009/06




41 研究論文(その他学術会議資料等)
共著
The local structure of α-FeSi2 under high pressure
Y.Mori, H. Nakano, G. Sakane, G. Aquilanti, H. Udono, K. Takarabe
phys. stat. sol. (b)

246, 541-543
2009/05




42 研究論文(学術雑誌)
共著
Surface preparation and characterization of single crystalline β-FeSi2
Y. Yamada, I. Wakaya, S. Ohuchi, H. Yamamoto, H. Asaoka, S. Shamoto, H. Udono
Surface Science

602, 3006-3009
2008/09




43 研究論文(国際会議プロシーディングス)
単著
Solution Growth and Low-Temperature Thermoelectric Properties of Single Crystalline ß-FeSi2
H. Udonoa, H. Suzuki, K. Goto, S. Mashiko, M. Uchikoshi and M. Issiki
Proceedings of Int. Conf. Thermoelectrics

241-244
2008/04




44 研究論文(学術雑誌)
共著
Crystal growth of ZnO bulk by CVT method using PVA
H. Udono, Y. Sumi, S. Yamada and I. Kikuma
J. Cryst. Growth

310, 1827-1831
2008/04

10.1016/j.jcrysgro.2007.11.226


45 研究論文(学術雑誌)
共著
Local neutron transmutation doping using isotopically enriched silicon film
Y Yamada, H Yamamoto, H Ohba, M Sasase,
F Esaka, Kenji Yamaguchi, H Udono, S Shamoto,
A Yokoyama, K Hojou
Journal of Physics and Chemistry of Solids

68, 2204-2208
2007/08

10.1016/j.jpcs.2007.08.056


46 (MISC)総説・解説(学術雑誌)
単著
半導体シリサイドの結晶成長と基礎物性
鵜殿治彦
応用物理

76/ 7, 790-793
2007/07/10




47 研究論文(学術雑誌)
共著
Polarized optical reflection study on single crystalline b-FeSi2
Haruhiko Udono, Isao Kikuma, Hiroyuki Tajima , Kenichi Takarabe
J. Mat. Sci.: Mat. in Electron.

18, S65-S69
2007/03/24

10.1007/s10854-007-9166-z


48 研究論文(学術雑誌)
共著
Single crystalline β-FeSi2 grown using high-purity FeSi2 source
Kouhei Gotoh, Hirokazu Suzuki, Haruhiko Udono, Isao Kikuma, Fumitaka Esaka, Masahito Uchikoshi and Minoru Isshiki
Thin Solid Films

515, 8263 – 8267
2007/02/21

doi:10.1016/j.tsf.2007.02.066


49 研究論文(学術雑誌)
共著
Melt growth and characterization of Mg2Si bulk crystals
Daiki Tamura, Ryo Nagai, Kazuhiro Sugimoto, Haruhiko Udono, Isao Kikuma, Hiroyuki Tajima and Isao J. Ohsugi
Thin Solid Films

515, 8272 – 8276
2007/02/21

doi:10.1016/j.tsf.2007.02.065


50 研究論文(学術雑誌)
共著
Preparation of β-FeSi2 substrates by molten salt method
M. Okubo, T. Ohishi, A. Mishina, I. Yamauchi, H. Udono, T. Suemasu, T. Matsuyama and H. Tatsuoka
Thin Solid Films

515, 8268 – 8271
2007/02/21

doi:10.1016/j.tsf.2007.02.067


51 研究論文(学術雑誌)
共著
Growth of β-FeSi2 thin films on β-FeSi2 (110) substrates by molecular beam epitaxy
M. Muroga, H. Suzuki, H. Udono, I. Kikuma, A. Zhuravlev, K. Yamaguchi, H. Yamamoto and T. Terai
Thin Solid Films

515, 8197 – 8200
2007/02/20

10.1016/j.tsf.2007.02.040


52 研究論文(学術雑誌)
共著
Novel photo-sensitive materials for hydrogen generation through photovoltaic electricity
Kenji Yamaguchi, Haruhiko Udono
International Journal of Hydrogen Energy

32, 2726-2729
2007/01/03




53 研究論文(学術雑誌)
共著
Thermoeletric properties of solution grown β-FeSi2 single crystals
Hirokazu Suzuki, Haruhiko Udono, Isao Kikuma
Mater. Trans.

47/ 6, 1428-1431
2006/06/15




54 研究論文(学術雑誌)
共著
Solution growth of n-type β-FeSi2 single crystals using Ni-doped Zn solvent
H. Udono, Y. Aoki, H. Suzuki, I. Kikuma
J. Crystal Growth

292, 290-293
2006/05/24




55 研究論文(学術雑誌)
共著
Effect of thermal annealing on the photoluminescence of β-FeSi2 films on Si substrate
Kenji Yamaguchi, Kenichiro Shimura, Haruhiko Udono, Masato Sasase, Hiroyuki Yamamoto, Shin-ichi Shamoto, Kiichi Hojou
Thin Solid Films

508, 367-370
2005/11/23




56 研究論文(国際会議プロシーディングス)
共著
Growth and characterization of Mg2Si bulk crystals
Haruhiko Udono, Ryo Nagai, Daiki Tamura, Isao Kikuma
The 3rd Asian Conference on Crystal Growth and Crystal Technology, Beijin China

EA10
2005/10




57 研究論文(学術雑誌)
共著
High interband transitions in β-FeSi2 under pressure
Yasunobu SUMIDA, Yoshihisa MORI, Kenichi TAKARABE, Haruhiko UDONO, Isao KIKUMA
Jpn. J. Appl. Phys.

44/ 10, 7421-7423
2005/10/11




58 (MISC)総説・解説(その他)
単著
鉄シリサイドバルク成長と特性
鵜殿治彦
機能材料

25/ 10, 31-40
2005/09/05




59 研究論文(学術雑誌)
共著
Solution Growth of high quality p-type β-FeSi2 single crystals using Zn solvent
Hauruhiko Udono, Yuta Aoki, Isao Kikuma, Hiroyuki Tajima, Isao J. Ohsugi
J. Crystal Growth

275, e2003-e2007
2004/12/15




60 研究論文(学術雑誌)
共著
Solution growth of N-type β-FeSi2 single crystals using Sn-solvent
Haruhiko Udono, Kazutaka Matsumura, Isao J. Osugi, Isao Kikuma
J. Crystal Growth

275, e1967-e1974
2004/12/15




61 研究論文(学術雑誌)
共著
Structural study of FeSi2 under pressure
K. Takarabe, T. Ikai, Y. Mori, H. Udono, I. Kikuma
J. Appl. Phys.

96/ 9
2004/11/13




62 研究論文(国際会議プロシーディングス)
共著
Anisotropy of refractive indes of β-FeSi2
H. Udono, I. Kikuma, H. Tajima, K. Takarabe
Proc. 1st Inter. Conf. on Group IV Photonics

ThP12
2004/09/29




63 研究論文(学術雑誌)
共著
Indirect optical absorption of single crystalline β-FeSi2
Haruhiko Udono, Isao Kikuma, Tsuyoshi Okuno, Yasuaki Masumoto, Hiroyuki Tajima
Appl. Phys. Lett.

11/ 85, 1937-1939
2004/09/13




64 研究論文(学術雑誌)
共著
Reflection and absorption spectra of β-FeSi2 under pressure
Y. Mori, Y. Sumida, K. Takarabe, T. Suemasu, F. Hasegawa, H. Udono, I. Kikuma.
Thin Solid Films

461/ 1, 171-173
2004/08/29




65 研究論文(学術雑誌)
共著
Raman spectra for β-FeSi2 bulk crystals
Y. Maeda, H. Udono, Y. Terai
Thin Solid Films

461/ 1, 165-170
2004/08/29




66 研究論文(学術雑誌)
共著
Structural and electrical properties of β-FeSi2 single crystals grown using Sb solvent
H. Kannou, Y. Saito, M. Kuramoto, T. Takeyama, T. Nakamura, T. Matsuyama, H. Udono, Y. Maeda, M. Tanaka, Z. Q. Liu, H. Tatsuoka, H. Kuwabara
Thin Solid Films

461/ 1, 110-115
2004/08/29




67 研究論文(学術雑誌)
共著
Thermal expansion of β-FeSi2 at low temperatures
Y. Terai, H. Ishibashi, Y. Maeda, H. Udono
Thin Solid Films

461/ 1, 106-109
2004/08/29




68 研究論文(学術雑誌)
共著
Electrical properties of p-type β-FeSi2 single crystals grown from Ga and Zn solvents
H. Udono, I. Kikuma
Thin Solid Films

461/ 1, 188-192
2004/08/29




69 研究論文(学術雑誌)
共著
Optical properties of β-FeSi2 single crystals grown from solutions
H. Udono, I. Kikuma, T. Okuno, Y. Masumoto, H. Tajima, S. Komuro
Thin Solid Films

461/ 1, 182-187
2004/08/29




70 研究論文(学術雑誌)
共著
Etch Pits Observation and Etching Properties of β-FeSi2
H. Udono and I. Kikuma
Mat. Sci. Semicon. Proc.

6, 413-416
2003/11




71 研究論文(学術雑誌)
共著
Control of Ga Doping Level in β-FeSi2 using Sn-Ga Solvent
H. Udono, K. Matsumura, I. J. Ohsugi and I. Kikuma
Mat. Sci. Semicon. Proc.

6, 285-287
2003/11




72 (MISC)総説・解説(その他)
共著
シリサイド半導体の基礎物性
前田佳均,鵜殿治彦
日本学術振興会未踏・ナノデバイステクノロジー第151委員会,第65回研究会資料

1-8
2003/05




73 (MISC)総説・解説(その他)
単著
β-FeSi2バルク結晶の光吸収
鵜殿治彦
第3回シリサイド系半導体研究会講演予稿

4
2003/03




74 (MISC)総説・解説(その他)
単著
β-FeSi2の吸収特性
鵜殿治彦
「2002年シリサイド系半導体・夏の学校」研究会資料, JAERI-Conf 2002-014

14, 3-5
2002/08




75 研究論文(学術雑誌)
共著
Solution Growth and Optical Characterization of β-FeSi2 Bulk Crystals
H. Udono and I. Kikuma
Jpn. J. Appl. Phys.

41, L583 -L585
2002/05




76 研究論文(学術雑誌)
共著
Crystal Growth of β-FeSi2 by Temperature Gradient Solution Growth Method using Zn Solvent
H. Udono, S. Takaku and I. Kikuma
J. Crystal Growth

237-239, 1971 -1975
2002/04




77 研究論文(学術雑誌)
共著
Growth and Characterization of Br-doped ZnSe Single Crystals Grown by Vertical Sublimation Method
H. Kato, H. Udono and I. Kikuma
J. Crystal Growth

229, 79-86
2001/07




78 研究論文(学術雑誌)
共著
Observation of Etch Pits of β-FeSi2 Single Crystals
H. Udono and I. Kikuma
Jpn. J. Appl. Phys.

40, 4164-4165
2001/06




79 研究論文(学術雑誌)
共著
β-FeSi2 Single Crystals Grown from Solution
H. Udono and I. Kikuma
Jpn. J. Appl. Phys.

40, 1367-1369
2001/03




80 研究論文(学術雑誌)
共著
Effect of solution thickness on ZnSe crystals grown fron Se/Te mixed solutions
H. Kato, H. Udono and I. Kikuma
J. Crystal Growth

219, 346-352
2000/11




81 (MISC)総説・解説(その他)
単著
半導体鉄シリサイドバルク結晶の溶液成長
鵜殿治彦
材料科学

37/ 1, 34-38
2000/09




82 研究論文(国際会議プロシーディングス)
共著
Growth of β-FeSi2 on Si subsrtrate from liquid phase
H. Udono, M. Tada and I. Kikuma
Proc. Japan - UK joint workshop on KANKYO semiconductors, Tsukuba

65-67
2000/08




83 研究論文(国際会議プロシーディングス)
共著
β-FeSi2 Bulk Crystals Grown by the Temperature Gradient Solution Growth Method using Ga Solvent
H. Udono and I. Kikuma
Proc. Japan - UK joint workshop on KANKYO semiconductors, Tsukuba

3-5
2000/08




84 研究論文(学術雑誌)
共著
The effect of (Al, I) impurities and heat treatment on lattice paramaeter of single-crystal
H. Udono, I. Kikuma and Y. Okada
J. Crystal Growth

214/215, 889-893
2000/06




85 研究論文(学術雑誌)
共著
Solution Growth of Single-Phase β-FeSi2 Bulk Crystals
H. Udono and I. Kikuma
Jpn. J. Appl. Phys.

39, L225-L226
2000/03




86 研究論文(学術雑誌)
共著
Dependence of lattice parameter of melt-grown ZnSe on Zn partial pressure during in-situ annealing
H. Udono, I. Kikuma and Y. Okada
J. Crystal Growth

197, 466-470
1999/02




87 研究論文(学術雑誌)
共著
Lattice paramaeter of ZnSe crystals grown from melt under Zn partial pressure
H. Udono, I. Kikuma and Y. Okada
J. Crystal Growth

193, 39-42
1998/09




88 研究論文(学術雑誌)
共著
Rapid diffusion of V elements during the conversion of GaAs to GaAsP on a GaP substrate
M. Kimura, Z. Qin, S. Dost, H. Udono, A. Tanaka and T. Sukegawa
Appl. Surf. Sci.

113/114, 567-572
1997/04




89 研究論文(学術雑誌)
共著
Conversion mechanism of GaAs to GaAsP on GaP substrate
M. Kimura, Z. Qin, H. Udono, S. Dost, A. Tanaka and T. Sukegawa
Materials Sci. & Eng. B

44, 16-19
1997/02




90 研究論文(学術雑誌)
共著
A numerical analysis for the conversion phenomenon of GaAs to GaAsP on GaP substrate in an LPE system
M. Kimura, S. Dost, H. Udono, A. Tanaka, T. Sukegawa and Z. Qin
J. Crystal Growth

169
1996/12




91 研究論文(学術雑誌)
共著
Suppression of twins in GaAs layers grown on a GaP(111)B substrate by liquid phase epitaxy
H. Udono, A. Motogaito, M. Kimura, A. Tanaka and T. Sukegawa
J. Crystal Growth

169, 181-184
1996/11




92 研究論文(国際会議プロシーディングス)
共著
Conversion of GaAs Layer Grown on GaP Substrate to GaAsP in LPE System
H. Udono, H. Katsuno, A. Tanaka and T. Sukegawa
Jpn. J. Appl. Phys.

suppl. 32-3, 735-736
1993/12




93 研究論文(学術雑誌)
共著
Conversion from GaAs to GaAsP by annealing a GaAs layer on GaP in Ga-As-P solution
T. Sukegawa, H. Udono, M. Kimura, H. Katsuno, A. Tanaka
Jpn. J. Appl. Phys.

32, L1164-L1166
1993/08