Ibaraki University's
Graduate School of Science and Engineering (Engineering)
Department of Electrical and Electronic Engineering

Professor

UDONO Haruhiko


Career

  1. Research Associate, Ibaraki University 1996/04-2004/03
  2. Guest Researcher of TARA Project, Tsukuba University 2001/04-2004/03
  3. Guest Researcher, ISSP The University of Tokyo 2001/10/01-2012/03/31
  4. Associate Professor, Ibaraki University 2004/04/01-2007/03/31
  5. Associate Professor, Ibaraki University 2007/04/01-2012/03/31
  6. University of California, Berkeley, Visiting Researcher 2008/07-2009/02
  7. Professor, Ibaraki University 2012/04/01-Present

Academic background

  1. Shizuoka University Graduate School, Division of Electronic Science and Technology 電子応用工学専攻 Doctor course 1996 Completed
  2. Shizuoka University Graduate School, Division of Engineering 電子工学専攻 Master course 1993 Completed
  3. Shizuoka University Faculty of Engineering Department of Electronic Engineering 1991 Graduated

Academic degrees

  1. PhD Shizuoka University

Research Areas

  1. Electronic materials/Electric materials
  2. Semiconductor Engineering, Semiconductor Materials and Devices
  3. Applied materials
  4. Crystal engineering

Research keywords

  1. Semiconducting Silicide, Silicon Photonics, Thermoelectrics, IR Detector, Solar Cell, Bulk single crystal, Thin Films, Surface of semiconductor, Nano structure, Crystal Growth, MBE

Subject of research

  1. Crystal growth and solid state physics of ss-FeSi2 1999-Present

Proposed theme of joint or funded research

  1. シリサイド半導体結晶の成長技術の開発と赤外受発光素子,熱電素子への応用 Wish to undertake joint research with industry and other organizations including private sector. Technical consultation,Commisioned research,Joint research
  2. 溶液成長技術の利用 Wish to undertake joint research with industry and other organizations including private sector. Technical consultation,Commisioned research,Joint research
  3. 電気・熱物性評価技術の開発 Wish to undertake joint research with industry and other organizations including private sector. Technical consultation,Commisioned research,Joint research

Bibliography

  1. 熱電変換材料 実用・活用を目指した設計と開発 情報機構 2014/12/19
  2. シリサイド系半導体の科学と技術-資源・環境時代の新しい半導体と関連物質- 前田佳均編著 裳華房 2014/09/25
  3. サーマルマネージメント-余熱・排熱の制御と有効利用- 第4章第1節1.1 シリサイド系熱電材料の開発 鵜殿治彦 株)エヌ・ティー・エス 2013/04/17 978-4-86469-060-7
  4. Thermoelectrics and its Energy Harvesting Chap.18 "Preparation and thermoelectric properties of Iron Disilicide " Y. Isoda and H. Udono CRC Press 2012 978-1-4398-7470-7

Papers

  1. Research paper (scientific journal) Joint Enhanced thermoelectric properties of InSb: Studies on In/Ga doped GaSb/InSb crystals V. Nirmal Kumar, Y. Hayakawa, H. Udono, Y. Inatomi Intermetallics 105, 21-28 2019/02/01 10.1016/j.intermet.2018.11.006
  2. Origins of the nitrogen-related deep donor center and its preceding species in nitrogen-doped silicon determined by deep-level transient spectroscopy Nakamura Minoru, Murakami Susumu, Udono Haruhiko Applied Physics Express Japan Society of Applied Physics 12/ 2, 21005-21005 2019/02/01 1882-0778 URL
  3. (MISC) Introduction and explanation (scientific journal) Only 赤外センサ用Mg2Si結晶の融液成長 鵜殿 治彦 日本結晶成長学会誌 日本結晶成長学会 45/ 3 2018/10 0385-6275 URL <p>  We have grown high purity n-type Mg2Si single crystals by the vertical Bridgman growth method using a pyrolitic graphite (PG) crucible and high purity Mg (5N or 6N-up) and Si (10N-grade) source metals. The saturated electron concentration and Hall mobility of the grown crystals were (1 - 2) × 1015 cm-3 and 480 - 485 cm2/Vs at room temperature. Mg2Si substrates prepared from the crystals had an enough crystalline quality to fabricate pn-junction photodiodes (PDs). The ring-electrode-type, pn-junction PD fabricated by the rapid thermal diffusion of Ag and conventional lift-off process showed a good photoresponse below 2 μm in wavelength. The detectivity D* of 1 × 1012 cmHz1/2/W has been achieved with the PDs under 1.31 μm laser diode (LD) bombardment at 77K.</p>
  4. Research paper (scientific journal) Joint Characterization of iron in silicon by low-temperature photoluminescence and deep- level transient spectroscopy Minoru Nakamura, Susumu Murakami and Haruhiko Udono J. Appl. Phys. 123, 105101 2018/10/01 10.1063/1.5019958
  5. Research paper (scientific journal) Joint Crystal growth of Mg2Si for IR-detector spectroscopy Toshio Tokairin, Junya Ikeda,Haruhiko Udono J. Crystal Growth 468, 761-765 2017/06/15 10.1016/j.jcrysgro.2016.12.004

Research presentations

  1. Poster presentation その場熱処理によるMg2Si結晶のキャリア濃度の低減 第66回応用物理学会春期学術講演会 2019/03/10
  2. Poster presentation C-V法によるn型Mg2Si結晶のキャリア濃度測定 第66回応用物理学会春期学術講演会 2019/03/10
  3. Poster presentation ウエットエッチングによるMg2Si結晶欠陥の観察 第66回応用物理学会春期学術講演会 2019/03/10
  4. Oral presentation(general) Mg2S赤外線フォトダイオードの分光感度 平成30年度 電気学会東京支部茨城支所研究発表会 2018/11/17
  5. Oral presentation(general) OCVD法によるMg2Siのライフタイム評価 平成30年度 電気学会東京支部茨城支所研究発表会 2018/11/17

Intellectual property rights

  1. Patent GaあるいはSnでドーピングされたバルク状マンガンシリサイド単結晶体あるいは多結晶体およびその製造方法 特願2010-75467 2010/03/30
  2. Patent シリコン薄膜または同位体濃縮シリコン薄膜の製造方法 2008-303078 2008/12/18
  3. Patent β-FeSi2結晶の製造法および製造装置 2000/06/16 2002-3300 3912959 2007/02/09
  4. Patent 鉄シリサイド結晶の製造方法 1999/02/22 2000-247624 3891722 2006/12/15

Prizes

  1. Young Scientist Award (APAC-Silicide 2019) Comparison of crystalline quality and electrical property of Mg2Si crystals grown using PBN and PG graphite crucible 2019/07/23 指導学生受賞
  2. Best presentation student award, Ibaraki branch, IEEJ Znを添加したMg2Sn結晶の融液成長 2018/11/17 指導学生の受賞
  3. Best presentation student award, Ibaraki branch, IEEJ OCVD法によるMg2Siのライフタイム評価 2018/11/17 指導学生の受賞
  4. Best presentation student award, Ibaraki branch, IEEJ 溶融Mg2Si結晶の添加不純物による酸化効果への影響 2017/11/18 指導学生の受賞
  5. Best presentation student award, Ibaraki branch, IEEJ Mg2Siを用いたフォトダイオードの光検出器としての性能評価 2016/12/17 指導学生の受賞

Memberships of academic societies

  1. The Japan Society of Applied Physics 1993/03-Present
  2. JSAP Professional Group of Semiconducting Silicide and related materials 2001/04-Present
  3. 電子情報通信学会
  4. MRS
  5. American Physics Society 2006/05-Present

Committee Career

  1. JSAP Professional Group of Semiconducting Silicide and related materials 副委員長、企画委員 2019/01/01-2021/12/31
  2. 日本熱電学会 評議員 2018/09/01-2020/08/31
  3. 日本熱電学会 評議員 2016/09/01-2018/08/31
  4. JSAP Professional Group of Semiconducting Silicide and related materials 企画委員 2016/01/01-2018/12/31
  5. 日本熱電学会 評議員 2014/09/01-2016/08/31