Ibaraki University's
College of Engineering
Department of Electrical and Electronic Engineering

Professor

UDONO Haruhiko


Career

  1. Research Associate, Ibaraki University 1996/04-2004/03
  2. Guest Researcher of TARA Project, Tsukuba University 2001/04-2004/03
  3. Guest Researcher, ISSP The University of Tokyo 2001/10/01-2012/03/31
  4. Associate Professor, Ibaraki University 2004/04/01-2007/03/31
  5. Associate Professor, Ibaraki University 2007/04/01-2012/03/31
  6. University of California, Berkeley, Visiting Researcher 2008/07-2009/02
  7. Professor, Ibaraki University 2012/04/01-Present

Academic background

  1. Shizuoka University Graduate School, Division of Electronic Science and Technology 電子応用工学専攻 Doctor course 1996 Completed
  2. Shizuoka University Graduate School, Division of Engineering 電子工学専攻 Master course 1993 Completed
  3. Shizuoka University Faculty of Engineering Department of Electronic Engineering 1991 Graduated

Academic degrees

  1. PhD Shizuoka University

Research Areas

  1. Functional Materials
  2. Semiconductor Engineering, Semiconductor Materials and Devices
  3. Applied Physics of Property and Crystallography

Research keywords

  1. Semiconducting Silicide, Silicon Photonics, Thermoelectrics, IR Detector, Solar Cell, Bulk single crystal, Thin Films, Surface of semiconductor, Nano structure, Crystal Growth, MBE

Subject of research

  1. Crystal growth and solid state physics of ss-FeSi2 1999-Present

Proposed theme of joint or funded research

  1. シリサイド半導体結晶の成長技術の開発と赤外受発光素子,熱電素子への応用 Wish to undertake joint research with industry and other organizations including private sector. Technical consultation,Commisioned research,Joint research
  2. 溶液成長技術の利用 Wish to undertake joint research with industry and other organizations including private sector. Technical consultation,Commisioned research,Joint research
  3. 電気・熱物性評価技術の開発 Wish to undertake joint research with industry and other organizations including private sector. Technical consultation,Commisioned research,Joint research

Bibliography

  1. 熱電変換材料 実用・活用を目指した設計と開発 情報機構 2014/12/19
  2. シリサイド系半導体の科学と技術-資源・環境時代の新しい半導体と関連物質- 前田佳均編著 裳華房 2014/09/25
  3. サーマルマネージメント-余熱・排熱の制御と有効利用- 第4章第1節1.1 シリサイド系熱電材料の開発 鵜殿治彦 株)エヌ・ティー・エス 2013/04/17 978-4-86469-060-7
  4. Thermoelectrics and its Energy Harvesting Chap.18 "Preparation and thermoelectric properties of Iron Disilicide " Y. Isoda and H. Udono CRC Press 2012 978-1-4398-7470-7

Papers

  1. (MISC) Introduction and explanation (scientific journal) Si中Cu,Niの熱的振る舞い:フォトルミネッセンス/DLTS測定 中村 稔, 村上 進, 鵜殿 治彦 表面科学 公益社団法人 日本表面科学会 37/ 3, 128-133 2016/03 0388-5321 URL The influence of diffusion temperature on the formation of one type of Cu center denoted as CuDLB center, the relationship between the concentrations of the CuDLB center after the diffusion of Cu and those of contaminated Cu on sample surfaces, and the transformation of the CuDLB center to another type of Cu center denoted as the CuDLA center by annealing were investigated by photoluminescence and deep-level transient spectroscopy (DLTS) measurements. It was found that the CuDLB center is composed of one core Cu atom and weakly bonded three interstitial Cu atoms around the core and that the CuDLA center is the core of the CuDLB center. For Ni, the depth profiles of the substitutional Ni (Ni center) in silicon diffused with various concentrations of the element were measured by DLTS, and were found to be controlled by the temperature-dependent outdiffusion of Ni.
  2. Research paper (scientific journal) Joint Transformation of the nickel donor center by annealing in silicon measured by deep-level transient spectroscopy Minoru Nakamura, Susumu Murakami, and Haruhiko Udono Jpn. J. Appl. Phys. 55, 11302 2015/12/10 10.7567/JJAP.55.011302
  3. Research paper (scientific journal) Joint Thermal expansion of semiconducting silicides b-FeSi2 and Mg2Si Motoharu Imai, Yukihiro Isoda, Haruhiko Udono Intermetallics 67, 75-80 2015/08/24 10.1016/j.intermet.2015.07.015
  4. Research paper (international conference proceedings) Joint Fabrication and characterization of Mg2Si pn-junction photodiode with a ring electrode K. Daitoku, M. Takezaki, S. Tanigawa, D. Tsuya, H. Udono JJAP Conf. Proc. 3, 11103 2015/06/08
  5. Research paper (international conference proceedings) Joint Characterization of band structure of K8Ga8Si38 clathrate by optical measurement Masaru Iioka, Haruhiko Udono, Motoharu Imai, and Masato Aoki JJAP Conf. Proc. 3, 011201 2015/06/08

Research presentations

  1. Oral presentation(general) サファイア基板へのマグネシウムシリサイド薄膜固相合成 平成27年電気学会全国大会 2015/03/25
  2. Oral presentation(general) リング電極Mg2Si フォトダイオードにおけるメサ構造の形成 第62回応用物理学会春期学術講演会 2015/03/13
  3. Oral presentation(invited, special) Mg2Si pn接合ダイオードのAg拡散係数評価と拡散深さ制御 第62回応用物理学会春期学術講演会 2015/03/12
  4. Poster presentation 溶液法で合成した単相MnSi1.75-xの電気特性評価 第62回応用物理学会春期学術講演会 2015/03/12
  5. Poster presentation ウェットエッチングによるメサ型Mg2Si pn接合ダイオードの作製 第62回応用物理学会春期学術講演会 2015/03/12

Intellectual property rights

  1. Patent GaあるいはSnでドーピングされたバルク状マンガンシリサイド単結晶体あるいは多結晶体およびその製造方法 特願2010-75467 2010/03/30
  2. Patent シリコン薄膜または同位体濃縮シリコン薄膜の製造方法 2008-303078 2008/12/18
  3. Patent β-FeSi2結晶の製造法および製造装置 2000/06/16 2002-3300 3912959 2007/02/09
  4. Patent 鉄シリサイド結晶の製造方法 1999/02/22 2000-247624 3891722 2006/12/15

Prizes

  1. Young Scientist Award (APAC-Silicide 2016) Oxidation Resistance of Impurity Doped Mg2Si Grown from the Melt 2016/07/18 指導学生受賞
  2. Best presentation student award, Ibaraki branch, IEEJ Mg2Si溶融結晶の格子熱伝導率の低減と熱電性能の改善 2014/11/22 指導学生の受賞
  3. Best presentation student award, Ibaraki branch, IEEJ Mg2Si溶融結晶の格子熱伝導率の低減と熱電性能の改善 2014/11/22 指導学生の受賞
  4. 第75回応用物理学会秋季学術講演会 講演奨励賞(指導学生) スパッタエッチングによるMg2Si結晶中のAg熱拡散深さの評価 2014/09/20 指導学生受賞
  5. Young Scientist Award (ICSS-Silicide 2014) Evaluation of Mg2Si pn-junction depth by sputter etching 2014/07/20 指導学生受賞

Memberships of academic societies

  1. The Japan Society of Applied Physics 1993/03-Present
  2. JSAP Professional Group of Semiconducting Silicide and related materials 2001/04-Present
  3. 電子情報通信学会
  4. MRS
  5. American Physics Society 2006/05-Present

Committee Career

  1. 日本熱電学会 評議員 2016/09/01-2018/08/31
  2. JSAP Professional Group of Semiconducting Silicide and related materials 企画委員 2016/01/01-2018/12/31
  3. 日本熱電学会 評議員 2014/09/01-2016/08/31
  4. JSAP Professional Group of Semiconducting Silicide and related materials 企画委員 2013/01/01-2015/12/31
  5. JSAP Professional Group of Semiconducting Silicide and related materials 委員長 (Chair) 2010/01-2012/12